Abstract
In this study, the electron effective masses, including longitudinal, transverse, density-of-states and conductivity effective masses, have been systematically investigated in (001), (101) and (111) biaxially strained Si and Si1−x Ge x . It is found that the effect of strain on the longitudinal and transverse masses can be neglected, that the density-of-states masses in (001) and (110) biaxially strained Si and Si1−x Ge x materials decrease significantly with increasing Ge fraction (x), and that the conductivity masses along typical orientations in (001) and (110) strained Si and Si1−x Ge x .are obviously different from those in relaxed Si. The quantitative results obtained from this work may provide valuable theoretical references to understanding strained materials physics and studying conduction channel design related to stress and orientations in the strained devices.
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Song J J, Zhang H M, Hu H Y, et al. Calculation of band structure in (101)-biaxially strained Si. Sci China Ser G-Phys Mech Astron, 2009, 52(4): 546–550
Olsen S H, Yan L, Aqaiby R, et al. Strained Si/SiGe MOS technology: Improving gate dielectric integrity. Microelectron Eng, 2009, 86(3): 218–223
Song J J, Zhang H M, Hu H Y, et al. Valence band structure of strained Si/(111)Si1−x Gex. Sci China-Phys Mech Astron, 2010, 53(3): 454–457
Song J J, Zhang H M, Hu H Y, et al. Determination of conduction band edge characteristics of strained Si/Si1−x Gex. Chin Phys, 2007, 16(12): 3827–3831
Song J J, Zhang H M, Dai X Y, et al. Band structure of strained Si/(111)Si1−x Gex: A first principles investigation. Acta Phys Sin, 2008, 57(9): 5918–5922
Bennett N S, Cowern N E B, Sealy B J. Model for electron mobility as a function of carrier concentration and strain in heavily doped strained silicon. Appl Phys Lett, 2009, 94(25): 2109
Driussi F, Esseni D, Selmi L. On the electron mobility enhancement in biaxially strained Si MOSFETs. Solid-State Electron, 2008, 52(4): 498–505
Chee W, Maikop S, Yu C Y. Mobility-enhancement technologies. IEEE Circ Devices Mag, 2005, 21(3): 21–36
Fischetti M V, Laux S E. Band structure, deformation potentials and carrier mobility in strained Si, Ge and SiGe alloys. J Appl Phys, 1996, 80(4): 2234–2252
Rieger M M, Vogl P. Electronic-band parameters in strained Si1−x Gex alloys on Si1−y Gey substrates. Phys Rev B, 1993, 48(19): 14276–14287
Douglas J P. Si/SiGe heterostructures: From material and physics to devices and circuits. Semicond Sci Technol, 2004, 19(4): 75–108
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Song, J., Yang, C., Zhang, H. et al. Longitudinal, transverse, density-of-states, and conductivity masses of electrons in (001), (101) and (111) biaxially-strained-Si and strained-Si1−x Ge x . Sci. China Phys. Mech. Astron. 55, 2033–2037 (2012). https://doi.org/10.1007/s11433-012-4879-2
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DOI: https://doi.org/10.1007/s11433-012-4879-2