Abstract
The structure model used for calculation was defined according to Vegard’s rule and Hooke’s law. Calculations were performed on the electronic structures of (101)-biaxially strained Si on relaxed Si1−X Ge X alloy with Ge fraction ranging from X = 0 to 0.4 in steps of 0.1 by CASTEP approach. It was found that [±100] and [00±1] valleys (δ4) splitting from the [0±10] valley (Δ2) constitute the conduction band (CB) edge, that valence band (VB) edge degeneracy is partially lifted and that the electron mass is unaltered under strain while the hole mass decreases in the [100] and [010] directions. In addition, the fitted dependences of CB splitting energy, VB splitting energy and indirect bandgap on X are all linear.
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References
Hu H Y, Zhang H M, Jia X Z, et al. Study on Si-SiGe three-dimension CMOS integrant circuits. Chin J Semiconduct, 2007, 28(5): 36–40
Watling J R, Yang L, Borici M, et al. The impact of interface roughness scattering and degeneracy in relaxed and strained Si n-channel MOSFETs. Solid-State Electron, 2004, 48: 1337–1346
Chattopadhyay S, Driscoll L D, Kwa K S K, et al. Strained Si MOSFETs on relaxed SiGe platforms: Performance and challenges. Solid-State Electron, 2004, 48: 1407–1416
Guillaume T, Mouis M. Calculations of hole mass in [110]-uniaxially strained silicon for the stress-engineering of p-MOS transistors. Solid-State Electron, 2006, 50: 701–708
Chen Z W, Lv M Y, Liu R P. Stability and electronic structure of ordered Si0.75Ge0.25C alloy. J Appl Phys, 2005, 98: 1–3
Rieger M M, Vogl P. Electronic-band parameters in strained Si1−x Gex alloys on Si1−y Gey substrates. Phys Rev, 1993, 48(19): 276–287
Dhar S, Kosina H, Palankovski V, et al. Electron mobility model for strained-Si devices. IEEE Trans Electron Devices, 2005, 52(4): 527–533
Smirnov S, Kosina H. Monte Carlo modeling of the electron mobility in strained Si1−x Gex layers on arbitrarily oriented Si1−y Gey substrates. Solid-State Electron, 2004, 48: 1325–1335
Fischetti M V, Laux S E. Band structure, deformation potential, and carrier mobility in strained Si, Ge and SiGe alloy. J Appl Phys, 1996, 80(4): 2234–2252
Li Y, Liu Y, Chen N, et al. Vacancy and copper-doping effect on superconductivity for clathrate materials. Phys Lett A, 2005, 345: 398–408
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Supported by the National Pre-research Foundation of China (Grant Nos. 51308040203 and 51408061105DZ0171)
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Song, J., Zhang, H., Hu, H. et al. Calculation of band structure in (101)-biaxially strained Si. Sci. China Ser. G-Phys. Mech. Astron. 52, 546–550 (2009). https://doi.org/10.1007/s11433-009-0078-1
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DOI: https://doi.org/10.1007/s11433-009-0078-1