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Current collapse suppressed GaN diodes with 38 Watts high RF power rectifier capability

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Acknowledgements

This work was supported in part by National Key Research and Development Program (Grant No. 2022YFB3607600), National Natural Science Foundation of China (Grant No. 62204195), Key Research and Development Program of Jiangsu Province (Grant No. BE2022057-2), and Fundamental Research Funds for the Central Universities (Grant No. XJS221109).

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Authors and Affiliations

  1. Key Lab of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an, 710071, China

    Kui Dang, Zhilin Qiu, Shudong Huo, Peng Zhan, Huining Liu, Yachao Zhang, Jing Ning, Hong Zhou & Jincheng Zhang

  2. Guangzhou Wide Bandgap Semiconductor Innovation Center, Guangzhou Institute of Technology, Xidian University, Guangzhou, 510555, China

    Kui Dang

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  1. Kui Dang
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  2. Zhilin Qiu
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  3. Shudong Huo
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  4. Peng Zhan
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  5. Huining Liu
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  6. Yachao Zhang
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  7. Jing Ning
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  8. Hong Zhou
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  9. Jincheng Zhang
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Corresponding authors

Correspondence to Jing Ning, Hong Zhou or Jincheng Zhang.

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Dang, K., Qiu, Z., Huo, S. et al. Current collapse suppressed GaN diodes with 38 Watts high RF power rectifier capability. Sci. China Inf. Sci. 67, 129401 (2024). https://doi.org/10.1007/s11432-023-3795-8

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  • DOI: https://doi.org/10.1007/s11432-023-3795-8

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