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2.29-kV GaN-based double-channel Schottky barrier diodes on Si substrates with high VON uniformity

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References

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Acknowledgements

This work was supported in part by National Key Research and Development Program of China (Grant No. 2021YFB3601900), Guangdong Basic and Applied Basic Research Foundation (Grant No. 2020A1515110316), Key-Area Research and Development Program of Guangdong Province (Grant No. 2020B010174001), Fundamental Research Plan (Grant No. 11JCKY2020110B010), and Key Research and Development Program in Shaanxi Province (Grant No. 2016KTZDGY-03-01).

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Authors and Affiliations

  1. Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an, 710071, China

    Ren Huang, Weihang Zhang, Jincheng Zhang, Chunxu Su, Xi Liu, Liyu Fu & Yue Hao

  2. Wide Bandgap Semiconductor Innovation Center of Guangzhou, Guangzhou Institute of Technology, Xidian University, Guangzhou, 510555, China

    Weihang Zhang

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  1. Ren Huang
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  2. Weihang Zhang
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  3. Jincheng Zhang
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  4. Chunxu Su
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  5. Xi Liu
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  6. Liyu Fu
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  7. Yue Hao
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Corresponding authors

Correspondence to Weihang Zhang or Jincheng Zhang.

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Huang, R., Zhang, W., Zhang, J. et al. 2.29-kV GaN-based double-channel Schottky barrier diodes on Si substrates with high VON uniformity. Sci. China Inf. Sci. 66, 169404 (2023). https://doi.org/10.1007/s11432-022-3520-8

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  • DOI: https://doi.org/10.1007/s11432-022-3520-8

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