Abstract
In this paper, unique ferroelectric-like characteristics in amorphous (a-) ZrO2-based devices enabled by mobile ions are systematically investigated at room temperature and cryogenic. The physical origin of the ferroelectric-like behaviors of the metal/a-ZrO2/metal capacitor is confirmed to be the migration of ions exhibiting strong frequency dependency due to the limited velocity of the mobile ions, which is proven by the comparison between experimental results and theoretical analysis. The ferroelectric-type hysteresis will be reduced sharply with the decrease of the temperature, which is essentially different from the reported doped-HfO2 FeFET. This further confirms that the origin of the ferroelectric-like characteristics is the migration and redistribution of the mobile ions.
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Acknowledgements
This work was supported by National Key Research and Development Project (Grant No. 2022ZD0119002), National Natural Science Foundation of China (Grant Nos. 62204226, 62025402, 62090033, 91964202, 62204229, 62204228), Major Scientific Research Project of Zhejiang Lab (Grant No. 2021MD0AC01), and Zhejiang Province Key R&D Programs (Grant Nos. 2022C01232, 2021C05004).
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Liu, H., Chen, J., Jin, C. et al. Ferroelectric-like behaviors of metal-insulator-metal with amorphous dielectrics. Sci. China Inf. Sci. 66, 200410 (2023). https://doi.org/10.1007/s11432-023-3759-x
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DOI: https://doi.org/10.1007/s11432-023-3759-x