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Dependency of well-contact density on MCUs in 65-nm bulk CMOS SRAM

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Acknowledgements

This work was supported by Preliminary Research Program of National University of Defense Technology of China (Grant No. 0100066314001).

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Authors and Affiliations

  1. College of Computer, National University of Defense Technology, Changsha, 410073, China

    Cheng Xie, Yueyue Chen, Jianjun Chen & Jizuo Zhang

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  1. Cheng Xie
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  2. Yueyue Chen
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  3. Jianjun Chen
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  4. Jizuo Zhang
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Correspondence to Cheng Xie.

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Xie, C., Chen, Y., Chen, J. et al. Dependency of well-contact density on MCUs in 65-nm bulk CMOS SRAM. Sci. China Inf. Sci. 62, 69402 (2019). https://doi.org/10.1007/s11432-017-9549-8

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  • DOI: https://doi.org/10.1007/s11432-017-9549-8

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