With the scaling down of field-effect transistors (FETs) to improve their performance, 3D vertical surrounding gate structure has drawn great attention. On the other hand, concerning the channel materials, InAs nanowires (NWs) have been demonstrated to have great potential in FET due to their high mobility and other excellent electrical properties. Here, we report the first all-metal electrodes vertical gate-allaround (VGAA) FET fabricated using self-catalyzed selective grown InAs NWs array grown by metal organic chemical vapor deposition. A typical transistor we fabricated has an on-state current larger than 37 μA/μm when the drain voltage and gate voltage are +0.6 V and +3.0 V, respectively, and an on-off ratio over 3 orders of magnitudes. We have measured 34 transistors in total, and most of them have the on-off ratio between 102 and 104. Annealing is observed to improve the contact property, increase the on-state current, but decrease the on-off ratio. The ways to improve the performance of InAs NW VGAA FET are discussed.
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This work was supported by National Basic Research Program of China (Grant No. 2012CB932700(02, 01)), National Key Research and Development Plan (Grant No. 2016YFA0200802), and National Natural Science Foundation of China (Grant No. 61621061). We thank Dr. Tuanwei SHI and Dr. Mengqi FU for the valuable discussions, Mr. Jun XU and Dr. Xing LI for assistance in FIB.
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Li, T., Yang, W., Han, Y. et al. All-metal electrodes vertical gate-all-around device with self-catalyzed selective grown InAs NWs array. Sci. China Inf. Sci. 61, 062404 (2018). https://doi.org/10.1007/s11432-017-9305-x
- vertical gate-all-around
- field effect transistor