Abstract
Solar-blind imaging has attracted considerable interest in both military and civilian applications, spurring the development of high-performance deep-ultraviolet photodetector arrays (PDAs) with wide-bandgap semiconductor materials. Herein, we present a novel method to enhance the performance of solar-blind PDAs (SBPDs) using β-Ga2O3 films obtained by the phase transition of heterogeneous epitaxial sub-stable ε-Ga2O3, achieved through high-temperature rapid annealing. Metal-semiconductor-metal-type SBPDs based on phase-transformed β-Ga2O3 films exhibited superior performance, including an ultrahigh responsivity of 459.38 A/W, detectivity of 1014−1015 Jones, external quantum efficiency of 104%−105%, rejection ratio (R254/R365) of 105−106, photo-to-dark current ratio of 104−106, fast response speed of 1.01 s/0.06 s, and favorable stability. Notably, the ultrahigh responsivity of β-Ga2O3-film-based devices was approximately 222-fold higher than that of ε-Ga2O3 film-based devices. The assembled 4 × 5 β-Ga2O3 film-based PDAs exhibited favorable uniformity, repeatability, and high spatial resolution for solar-blind imaging. Our study offers a promising approach for the development of high-performance β-Ga2O3-based PDAs for solar-blind ultraviolet imaging with potential applications in both military and civilian fields.
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This work was supported by the National Natural Science Foundation of China (Grant Nos. 11904041 and 12104077), the Natural Science Foundation of Chongqing (Grant Nos. cstc2020jcyj-msxmX0557, cstc2019jcyj-msxmX0237, cstc2020jcyj-msxmX0533, and CSTB2022BSXM-JCX0090), the Science and Technology Research Project of Chongqing Education Committee (Grant Nos. KJQN202100540, KJQN202000511, and KJQN202100501), and the College Students Innovation and Entrepreneurship Training Program of Chongqing City (Grant No. S202210637052).
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Boosting the performance of deep-ultraviolet photodetector arrays based on phase-transformed heteroepitaxial β-Ga2O3 films for solar-blind imaging
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Zheng, Q., Chen, L., Li, X. et al. Boosting the performance of deep-ultraviolet photodetector arrays based on phase-transformed heteroepitaxial β-Ga2O3 films for solar-blind imaging. Sci. China Technol. Sci. 66, 2707–2715 (2023). https://doi.org/10.1007/s11431-023-2416-6
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DOI: https://doi.org/10.1007/s11431-023-2416-6