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High responsivity and fast response 8×8 β-Ga2O3 solar-blind ultraviolet imaging photodetector array

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Abstract

In this work, an 8×8 Ga2O3 solar-blind ultraviolet photodetector array is introduced for image sensing application. The 2-in wafer-scaled Ga2O3 thin film was grown by metalorganic chemical vapor deposition technique; and the photodetector array was fabricated through ultraviolet photolithography, lift-off, and electron-beam evaporation. In addition to the high solar-blind/visible rejection ratio of 104, every photodetector cell in the array has high performance and fast response speed, such as responsivity of 49.4 A W−1, specific detectivity of 6.8 × 1014 Jones, external quantum efficiency of 1.9 × 104%, linear dynamic range of 117.8 dB, and response time of 41 ms, respectively, indicating the high photo-response performance of the photodetector. Moreover, the photodetector array displayed uniform responsivity with a standard deviation of ∼6%, and presented a sensing image of low chromatic aberration, owing to the high resolution of the photodetector array. In a word, this work may contribute to developing Ga2O3-based optoelectronic device applications.

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Author information

Authors and Affiliations

  1. Innovation Center of Gallium Oxide Semiconductor (IC-GAO), College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, 210023, China

    GaoHui Shen, Zeng Liu, Lei Li, YuFeng Guo & WeiHua Tang

  2. National and Local Joint Engineering Laboratory for RF Integration and Micro-Assembly Technologies, Nanjing University of Posts and Telecommunications, Nanjing, 210023, China

    Zeng Liu, YuFeng Guo & WeiHua Tang

  3. Key Laboratory of Aerospace Information Materials and Physics (NUAA), MIIT, Nanjing, 211106, China

    Zeng Liu

  4. College of Physics, MIIT Key Laboratory of Aerospace Information Materials and Physics, Key Laboratory for Intelligent Nano Materials and Devices, Nanjing University of Aeronautics and Astronautics, Nanjing, 211106, China

    Kai Tang & ShuLin Sha

  5. Advanced Materials Thrust, Function Hub, The Hong Kong University of Science and Technology (Guangzhou), Nansha, 511458, China

    Chee-Keong Tan

  6. Department of Electronic and Computer Engineering, School of Engineering, The Hong Kong University of Science and Technology, Hong Kong, 999077, China

    Chee-Keong Tan

Authors
  1. GaoHui Shen
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  2. Zeng Liu
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  3. Kai Tang
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  4. ShuLin Sha
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  5. Lei Li
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  6. Chee-Keong Tan
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  7. YuFeng Guo
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  8. WeiHua Tang
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Corresponding authors

Correspondence to Zeng Liu or WeiHua Tang.

Additional information

This work was supported by the National Key R&D Program of China (Grant No. 2022YFB3605404), the National Natural Science Foundation of China (Grant No. 62204125), the Open Fund of Key Laboratory of Aerospace Information Materials and Physics (NUAA) MIIT, and the Natural Science Research Start-up Foundation of Recuring Talents of Nanjing University of Posts and Telecommunications (Grant Nos. XK1060921115, and XK1060921002).

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Shen, G., Liu, Z., Tang, K. et al. High responsivity and fast response 8×8 β-Ga2O3 solar-blind ultraviolet imaging photodetector array. Sci. China Technol. Sci. 66, 3259–3266 (2023). https://doi.org/10.1007/s11431-022-2404-8

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  • DOI: https://doi.org/10.1007/s11431-022-2404-8

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