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Van der Waals Epitaxy: A new way for growth of III-nitrides

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Authors and Affiliations

  1. State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, 130033, China

    Yang Chen, Yu-Ping Jia, Zhi-Ming Shi, Xiao-Juan Sun & Da-Bing Li

  2. Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China

    Da-Bing Li

Authors
  1. Yang Chen
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  2. Yu-Ping Jia
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  3. Zhi-Ming Shi
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  4. Xiao-Juan Sun
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  5. Da-Bing Li
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Corresponding author

Correspondence to Yu-Ping Jia.

Additional information

This work was supported by the National Key R&D Program of China (Grant No. 2016YFB0400101), the National Science Fund for Distinguished Young Scholars (Grant No. 61725403), the National Natural Science Foundation of China (Grant Nos. 61574142, 61874118), the Key Program of the International Partnership Program of Chinese Academy of Sciences (Grant No. 181722KYSB20160015), the Jilin Provincial Science & Technology Department (Grant No. 20180201026 GX), the Strategic Priority Research Program of the Chinese Academy of Sciences (Grant No. XDA22020602), and the Youth Innovation Promotion Association of CAS.

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Chen, Y., Jia, YP., Shi, ZM. et al. Van der Waals Epitaxy: A new way for growth of III-nitrides. Sci. China Technol. Sci. 63, 528–530 (2020). https://doi.org/10.1007/s11431-019-1488-y

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  • DOI: https://doi.org/10.1007/s11431-019-1488-y

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