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Fabrication of a monolithic 4H-SiC junction barrier schottky diode with the capability of high current

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Abstract

There is a great interest in monolithic 4H-SiC Junction Barrier Schottky (JBS) diodes with the capability of a high forward current for industrial power applications. In this paper, we report large-area monolithic 4H-SiC JBS diodes fabricated on a 10 µm 4H-SiC epitaxial layer doped to 6×1015 cm−3. JBS diodes with an active area of 30 mm2 had a forward current of up to 330 A at a forward voltage of 5 V, which corresponds to a current density of 1100 A/cm2. A near ideal breakdown voltage of 1.6 kV was also achieved for a reverse current of up to 100 μA through the use of an optimum multiple floating guard rings (MFGR) termination, which is about 87.2% of the theoretical value. The differential specific-on resistance (R SP-ON) was measured to be 3.3 mΩ cm2, leading to a FOM (VB2/R SP-ON) value of 0.78 GW/cm2, which is very close to the theoretical limit of the tradeoff between the specific-on resistance and breakdown voltage for 4H-SiC unipolar devices.

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Authors and Affiliations

  1. School of Advanced Materials and Nanotechnology, Xidian University, Xi’an, 710071, China

    QingWen Song

  2. Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, Xidian University, Xi’an, 710071, China

    QingWen Song, Hao Yuan, Chao Han, YuMing Zhang, XiaoYan Tang, YiMeng Zhang, Hui Guo, YiMen Zhang, RenXu Jia & YueHu Wang

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  1. QingWen Song
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  2. Hao Yuan
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  3. Chao Han
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  4. YuMing Zhang
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  5. XiaoYan Tang
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  6. YiMeng Zhang
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  7. Hui Guo
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  9. RenXu Jia
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  10. YueHu Wang
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Correspondence to QingWen Song.

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Song, Q., Yuan, H., Han, C. et al. Fabrication of a monolithic 4H-SiC junction barrier schottky diode with the capability of high current. Sci. China Technol. Sci. 58, 1369–1374 (2015). https://doi.org/10.1007/s11431-015-5882-4

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  • DOI: https://doi.org/10.1007/s11431-015-5882-4

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