Abstract
As the complexity of nanocircuits continues to increase, developing tests for them becomes more difficult. Failure analysis and the localization of internal test points within nanocircuits are already more difficult than for conventional integrated circuits. In this paper, a new method of testing for faults in nanocircuits is presented that uses single-photon detection to locate failed components (or failed signal lines) by utilizing the infrared photon emission characteristics of circuits. The emitted photons, which can carry information about circuit structure, can aid the understanding of circuit properties and locating faults. In this paper, in order to enhance the strength of emitted photons from circuit components, test vectors are designed for circuits’ components or signal lines. These test vectors can cause components to produce signal transitions or switching behaviors according to their positions, thereby increasing the strength of the emitted photons. A multiple-valued decision diagram (MDD), in the form of a directed acrylic graph, is used to produce the test vectors. After an MDD corresponding to a circuit is constructed, the test vectors are generated by searching for specific paths in the MDD of that circuit. Experimental results show that many types of faults such as stuck-at faults, bridging faults, crosstalk faults, and others, can be detected with this method.
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Pan, Z., Chen, L., Zhang, G. et al. A single-photon fault-detection method for nanocircuits that use GaN material. Sci. China Technol. Sci. 57, 270–277 (2014). https://doi.org/10.1007/s11431-014-5463-y
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DOI: https://doi.org/10.1007/s11431-014-5463-y