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A compact neural recording interface based on silicon microelectrode

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Abstract

A prototype of hybrid neural recording interface has been developed for extracellular neural recording. It consists of a silicon-based plane microelectrode array and a CMOS low noise neural amplifier chip. The neural amplifier chip is designed and implemented in 0.18 μm N-well CMOS 1P6M technology. The area of the neural preamplifier is only 0.042 mm2 with a gain of 48.3 dB. The input equivalent noise is 4.73 μVrms within pass bands of 4 kHz. To avoid cable tethering for high dense multichannel neural recording interface and make it compact, flip-chip bonding is used to integrate the preamplifier chip and the microelectrode together. The hybrid device measures 3 mm×5.5 mm×330 μm, which is convenient for implant or in-vivo neural recording. The hybrid device was testified in in-vivo experiment. Neural signals were recorded from hippocampus region of anesthetized Sprague Dawley rats successfully.

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Authors and Affiliations

  1. State Key Laboratory on Integrated Optoelectronic, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China

    JianQiang Han, Xu Zhang, WeiHua Pei, Qiang Gui, Ming Liu & HongDa Chen

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  1. JianQiang Han
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  2. Xu Zhang
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  3. WeiHua Pei
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  4. Qiang Gui
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  5. Ming Liu
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  6. HongDa Chen
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Correspondence to Xu Zhang.

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Han, J., Zhang, X., Pei, W. et al. A compact neural recording interface based on silicon microelectrode. Sci. China Technol. Sci. 56, 2808–2813 (2013). https://doi.org/10.1007/s11431-013-5359-2

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  • DOI: https://doi.org/10.1007/s11431-013-5359-2

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