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Influence of Si co-doping on magnetic, electrical and optical properties of Ga1–x Mn x N film grown by MOCVD

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Abstract

A detailed study is presented on magnetic, electrical and optical properties of Ga1−x Mn x N: Si film grown by metal organic chemical vapor deposition (MOCVD) with high-purity SiH4 as the Si dopant source. The room-temperature field dependence magnetization and zero-field-cooled (ZFC)/field-cooled (FC) measurements indicate that the film remains room-temperature ferromagnetism and it declines slightly after Si co-doping. However, room-temperature Hall measurements indicate that the electrical property of the film improves distinctly compared with Ga1−x Mn x N. Cathode luminescence (CL) measurements show an obvious enhancement in luminous property and different peak strength changes at three different positions. Therefore, we demonstrate that Fermi level and the electron structure of Mn atoms will change with variation of the impurities co-doped and the intrinsic defects and this may be related with room-temperature ferromagnetism and the other corresponding properties of the film.

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Authors and Affiliations

  1. State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, 100871, China

    FaFa Zhang, XueLin Yang, YuHao Zhang, XianZhe Jiang, ZhiYuan Lin, ZhiTao Chen, Ding Li, YueBin Tao, CunDa Wang & GuoYi Zhang

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  1. FaFa Zhang
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  2. XueLin Yang
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Zhang, F., Yang, X., Zhang, Y. et al. Influence of Si co-doping on magnetic, electrical and optical properties of Ga1–x Mn x N film grown by MOCVD. Sci. China Technol. Sci. 54, 1703–1707 (2011). https://doi.org/10.1007/s11431-011-4438-5

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  • DOI: https://doi.org/10.1007/s11431-011-4438-5

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