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Straight SiO x nanorod Y junctions

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Abstract

Novel straight silicon oxide [SiO x (1<x<2)] nanorod Y junctions have been synthesized on Si plate by thermal evaporation of mixed powders of silica and carbon nanofibers at 1300°C and condensation on a Si substrate without assistance of any catalyst. The synthesized samples were characterized by means of scanning electron microscopy, transmission electron microscopy, high resolution transmission electron microscopy, and energy dispersive X-ray spectroscopy. The results suggested that the straight nanorod Y junctions are amorphous and consist only of elements Si and O, and these rods with diameters about 50–200 nm have a neat smooth surface. The growth of such silicon oxide nanorods may be a result of the second nucleation on the surface of rods causing a change in the growth direction of silicon oxide nanorods developed.

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Correspondence to XiaoPing Zou.

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Supported by the Academic Human Resources Development in Institutions of Higher Learning under the Jurisdiction of Beijing, and the Program of Science & Technology Activity for Chinese Homecoming Fellow Abroad and Research Program of Beijing Key Laboratory for Sensor (Grant No. KM200810772009)

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Zhu, G., Zou, X., Cheng, J. et al. Straight SiO x nanorod Y junctions. Sci. China Ser. E-Technol. Sci. 52, 32–36 (2009). https://doi.org/10.1007/s11431-009-0006-7

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  • DOI: https://doi.org/10.1007/s11431-009-0006-7

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