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Low temperature doping of ZnO nanostructures

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Abstract

Doping of ZnO nanostructures was investigated by using a low temperature electrochemical process. Various dopant materials have been studied, including transition metals, group I, and group VII elements. The structure, composition, and optical properties of the doped ZnO nanostructures were analyzed by scanning electron microscopy, energy dispersive X-ray spectroscopy, photoluminescence, and x-ray diffraction. It was demonstrated that dopant elements were incorporated into the ZnO structures. The effects of dopant incorporation on the structure and properties of ZnO were also investigated. This low temperature approach is compatible with current micro-fabrication techniques and promising for large-scale production of doped ZnO nanostructures for optical and electronic applications.

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References

  1. Sun Y, Ketterson J B, Wong G K L. Excitonic gain and stimulated ultraviolet emission in nanocrystalline zinc-oxide powder. Appl Phys Lett, 2000, 77: 2322–2324

    Article  Google Scholar 

  2. Look D C. Recent advances in ZnO materials and devices. Mater Sci Eng B, 2001, 80: 383–387

    Article  Google Scholar 

  3. Wu R, Yang Y, Cong S, et al. Fractal dimension and photolumines-cence of ZnO tetrapod nanowhiskers. Chem Phys Lett, 2005, 406: 457–461

    Article  Google Scholar 

  4. Gao P X, Ding Y, Wang Z L. Crystallographic orientation-aligned ZnO nanorods grown by a tin catalyst. Nano Lett, 2003, 3: 1315–1320

    Article  Google Scholar 

  5. Vanheusden K, Warren W L, Seager C H, et al. Mechanisms behind green photoluminescence in ZnO phosphor powders. J Appl Phys, 1996, 79: 7983–7990

    Article  Google Scholar 

  6. Kind H, Yan H, Messer B, et al. Nanowire ultraviolet photodetectors and optical switches. Adv Mater, 2002, 14: 158

    Article  Google Scholar 

  7. Guo Q X, Kume Y, Tanaka T, et al. Strong room-temperature UV luminescence from ZnO grown by metal organic decomposition. Jpn J Appl Phys, 2005, 44: 8451–8452

    Article  Google Scholar 

  8. Minami T, Sato H, Nanto H, et al. Highly conductive and transparent Si-doped ZnO thin films prepared by RF magnetron sputtering. Jpn J Appl Phys, 1986, 25: L776–779

    Article  Google Scholar 

  9. Hu J H, Gordon R G. Textured fluorine-doped ZnO films by atmophoric pressure chemical vapor-deposition and their use in amorphous-silicon solar cells. Sol Cells, 1991, 30: 437–450

    Article  Google Scholar 

  10. Gao P X, Wang Z L. Nanoarchitectures of semiconducting and piezoelectric zinc oxide. J Appl Phys, 2005, 97: 044304

    Article  Google Scholar 

  11. Yu S F, Yuen C, Lau S P, et al. Ultraviolet amplified spontaneous emission from zinc oxide ridge waveguides on silicon substrate. Appl Phys Lett, 2003, 83: 4288–4290

    Article  Google Scholar 

  12. Cui J B, Gibson U J. Electrodeposition and room temperature ferromagnetic anisotropy of Co and Ni-doped ZnO nanowire arrays. Appl Phys Lett, 2005, 87: 133108

    Article  Google Scholar 

  13. Dietl T, Ohno H, Matsukura F, et al. Zener model description of ferromagnetism in zinc-blende magnetic semiconductors. Science, 2000, 287: 1019–1022

    Article  Google Scholar 

  14. Zhang S B, Wei S H, Zunger A. Intrinsic n-type versus p-type doping asymmetry and the defect physics of ZnO. Phys Rev B, 2001, 63: 075205

    Article  Google Scholar 

  15. Van de Walle C G. Hydrogen as a cause of doping in zinc oxide. Phys Rev Lett, 2000, 85: 1012–1015

    Article  Google Scholar 

  16. Cui J B, Gibson U J. Enhanced nucleation, growth rate, and dopant incorporation in ZnO nanowires. J Phys Chem B, 2005, 109: 22074–22077

    Article  Google Scholar 

  17. Ueda K, Tabata H, Kawai T. Magnetic and electric properties of transition-metal-doped ZnO films. Appl Phys Lett, 2001, 79: 988–990

    Article  Google Scholar 

  18. Ramachandran S, Tiwari A, Narayan J. Zn0.9Co0.1O-based diluted magnetic semiconducting thin films. Appl Phys Lett, 2003, 84: 5255–5257

    Article  Google Scholar 

  19. Strijkers G J, Dalderop J H J, Broeksteeg M A A, et al. Structure and magnetization of arrays of electrodeposited Co wires in anodic alumina. J Appl Phys, 1999, 86: 5141–5145

    Article  Google Scholar 

  20. Wu X L, Siu G G, Fu C L, et al. Photoluminescence and cathodoluminescence studies of stoichiometric and oxygen-deficient ZnO films. Appl Phys Lett, 2001, 78: 2285–2287

    Article  Google Scholar 

  21. Liu M, Kitai A H, Mascher P. Point defects and luminescence-centers in zinc oxide and zinc oxide doped with manganese. J Lumin, 1992, 54: 35–42

    Article  Google Scholar 

  22. Cui J B, Soo Y C, Chen T P, et al. Low-temperature growth and characterization of Cl-doped ZnO nanowire arrays. J Phys Chem C, 2008, 112: 4475–4579

    Article  Google Scholar 

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Cui, J.B., Thomas, M.A., Kandel, H. et al. Low temperature doping of ZnO nanostructures. Sci. China Ser. E-Technol. Sci. 52, 318–323 (2009). https://doi.org/10.1007/s11431-008-0353-9

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  • DOI: https://doi.org/10.1007/s11431-008-0353-9

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