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Comparison of short period InAs/GaSb superlattices on GaSb and GaAs substrates

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Abstract

Type II superlattices (SLs) short period InAs(4ML)/GaSb(8ML) were grown by molecular-beam epitaxy on lattice-mismatched GaAs substrates and on GaSb substrates. A smooth GaSb epilayer was formed on GaAs substrates by inserting mulit-buffer layers including an interfacial misfit mode AlSb quantum dot layer and AlSb/GaSb superlattices smooth layer. SLs grown on GaAs substrates (GaAs-based SLs) showed well-resolved satellite peaks in XRD. GaSb-based SLs with better structural quality and smoother surface showed strong photoluminescence at 2.55 μm with a full width at half maximum (FWHM) of 20 meV, narrower than 31 meV of GaAs-based SLs. Inferior optical absorption of GaAs-based SL was observed in the range of 2–3 μm. Photoresponse of GaSb-based SLs showed the cut-off wavelength at 2.6 μm.

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References

  1. Sai-Halasz G A, Tsu R, Esaki L. A new semiconductor system. Appl Phys Lett, 1977, 30: 651

    Article  Google Scholar 

  2. Johnson J L, Samoska L A, Gossard A C, et al. Electrical and optical properties of infrared photodiodes using the InAs/GaInSb superlattice in heterojunctions with GaSb. J Appl Phys, 1996, 80: 1116

    Article  Google Scholar 

  3. Fuchs F, Weimar U, Pletschen W, et al. High performance InAs/ GaInSb superlattice infrared photodiodes. Appl Phys Lett, 1997, 71: 3251

    Article  Google Scholar 

  4. Akahane K, Yamamoto N, Gozu S, et al. High quality GaSb/AlGaSb quantum well grown on Si substrates. J Appl Phys, 2005, 44: L15–L17

    Article  Google Scholar 

  5. Behet M, De Boeck J, Borghs G. MBE growth of InAs/Al,GaSb quantum well structures on Ge substrates. Appl Phys Lett, 1999, 74: 3371–3373

    Article  Google Scholar 

  6. Mohseni H, Tahraoui A, Wojkowski J, et al. Growth and characterization of InAs/GaSb photoconductors for long wavelength infrared range. Appl Phys Lett, 2000, 77: 1572

    Article  Google Scholar 

  7. Mohseni H, Wojkowski J, Razeghi M, et al. Uncooled InAs-GaSb type II infrared detectors grown on GaAs substrates for the 8–12 μm atmospheric window. IEEE J Quantum Electronics, 1999, 35: 1041

    Article  Google Scholar 

  8. Blank H R, Thomas M, Wong K C, et al. Influence of the buffer layers on the morphology and the transport properties in InAs/(Al, Ga)Sb quantum wells grown by molecular beam epitaxy. Appl Phys Lett, 1996, 69: 2080

    Article  Google Scholar 

  9. Hao R T, Xu Y Q, Zhou Z Q, et al. MBE growth of very short period INAs/GaSb type II super lattices on (001) GaAs substrates. J Phys D-Appl Phys, 2007, 40: 1080

    Article  Google Scholar 

  10. Bracker A S, Yang M J, Bennett B R, et al. Surface reconstruction phase diagrams for InAs, AlSb, and GaSb. J Crystal Growth, 2000, 220: 384

    Article  Google Scholar 

  11. Balakrishnan G, Tatebaysshi J, Khoshakhlagh A, et al. III/V ratio based selectivity between strained Stranski-Krastanov and strain-free GaSb quantum dots on GaAs. Appl Phys Lett, 2006, 89: 161104

    Article  Google Scholar 

Download references

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Authors and Affiliations

  1. Material School, NorthWest Polytechnical University, Xi’an, 610000, China

    Jie Guo

  2. Luoyang Optical Electronics Center, Luoyang, 471009, China

    Jie Guo, HuiJuan Chen & WeiGuo Sun

  3. Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China

    RuiTing Hao, YingQiang Xu & ZhiChuan Niu

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  1. Jie Guo
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  2. HuiJuan Chen
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  3. WeiGuo Sun
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  4. RuiTing Hao
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  5. YingQiang Xu
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  6. ZhiChuan Niu
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Correspondence to Jie Guo.

Additional information

Supported by the the National Natural Science Foundation of China (Grant Nos. 60607016,60625405) and the National Basic Research Program of China (Grant No. 2007CB936304)

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Guo, J., Chen, H., Sun, W. et al. Comparison of short period InAs/GaSb superlattices on GaSb and GaAs substrates. Sci. China Ser. E-Technol. Sci. 52, 23–27 (2009). https://doi.org/10.1007/s11431-008-0352-x

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  • DOI: https://doi.org/10.1007/s11431-008-0352-x

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