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Optical Properties of Short-Period InAs/GaSb Superlattices Grown by MOCVD

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Abstract

This paper reports the structural and photoluminescent study results of heterostructure with short-period InAs/GaSb superlattice grown by MOCVD with 8/10 ML period thickness. The photoluminescence spectra was observed in the range of 3–5 μm with intensity peak at 3.8 μm. SL minibands theoretical calculation with a high accuracy confirmed the experimental data obtained. This indicates that the specified structural parameters match the chosen growth conditions.

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ACKNOWLEDGMENTS

In conclusion, the authors are grateful to M. Remennyi and B.А. Matveyev for the help in study of samples by PL method.

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Authors and Affiliations

  1. Ioffe Institute, St Petersburg, Russia

    L. V. Danilov, R. V. Levin, V. N. Nevedomskyi & B. V. Pushnyi

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  1. L. V. Danilov
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  2. R. V. Levin
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  3. V. N. Nevedomskyi
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  4. B. V. Pushnyi
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Correspondence to L. V. Danilov.

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Danilov, L.V., Levin, R.V., Nevedomskyi, V.N. et al. Optical Properties of Short-Period InAs/GaSb Superlattices Grown by MOCVD. Semiconductors 53, 2078–2081 (2019). https://doi.org/10.1134/S1063782619120091

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  • DOI: https://doi.org/10.1134/S1063782619120091

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