Abstract
Fabrication of enhancement-mode high electron mobility transistors on AlGaN/GaN heterostructures grown on sapphire substrates is reported. These devices with 1 μm gate-length, 10 nm recessed-gate depth, 4 μm distance of source and drain exhibit a maximum drain current of 233 mA/mm at 1.5 V, a maximum transconductance of 210 mS/mm, and a threshold voltage of 0.12 V. The threshold voltage of these devices increased to 0.53 V after 500°C 5 min annealing in N2 ambient. The saturation drain current and transconductance of 15 nm recessed-gate depth reduced compared to those of 10 nm recessed-gate depth, but the threshold voltage increased to 0.47 V. The relations between threshold voltage, controlling ability of gate and recess depth were validated by testing C-V structures on AlGaN/GaN heterostructures with different etching depth.
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Supported by the National Natural Science Foundation of China (Grant No. 60736033)
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Hao, Y., Wang, C., Ni, J. et al. Development and characteristic analysis of enhancement-mode recessed-gate AlGaN/GaN HEMT. Sci. China Ser. E-Technol. Sci. 51, 784–789 (2008). https://doi.org/10.1007/s11431-008-0088-7
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DOI: https://doi.org/10.1007/s11431-008-0088-7