Skip to main content
SpringerLink
Log in

Numerical study on photoresist etching processes based on a cellular automata model

  • Published:
Science in China Series E: Technological Sciences Aims and scope Submit manuscript

Abstract

For the three-dimensional (3-D) numerical study of photoresist etching processes, the 2-D dynamic cellular automata (CA) model has been successfully extended to a 3-D dynamic CA model. Only the boundary cells will be processed in the 3-D dynamic CA model and the structure of “if-else” description in the simulation program is avoided to speed up the simulation. The 3-D dynamic CA model has found to be stable, fast and accurate for the numerical study of photoresist etching processes. The exposure simulation, post-exposure bake (PEB) simulation and etching simulation are integrated together to further investigate the performances of the CA model. Simulation results have been compared with the available experimental results and the simulations show good agreement with the available experiments.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. Strojwas A J, Zhu Z R, Ciplickas D, et al. Layout manufacturability analysis using rigorous 3-D topography simulation. In: Proceedings of IEEE Symposium on Semiconductor Manufacturing, San Jose, 2001. 263–266

  2. Cole D C, Barouch E, Conrad E D, et al. Using advanced simulation to aid microlithography development. Proc IEEE, 2001, 89(8): 1194–1213

    Article  Google Scholar 

  3. Hagouel P I, Neureuther A R. Modeling of X-ray resists for high-resolution lithography. In: Proceedings of ACS Organic Coatings and Plastics Chemistry, Chicago, 1975. 198–202

  4. Dill F H, Neureuther A R, Tuttle J A, et al. Modeling projection printing of positive photoresists. IEEE Trans Electr Dev, 1975, 22(7): 456–464

    Google Scholar 

  5. Scheckler E W, Tam N N, Pfau A K, et al. An efficient volume-removal algorithm for practical three-dimensional lithography simulation with experimental verification. IEEE Trans Comput Aided Design Integr Circ Syst, 1993, 12(9): 1345–1356

    Article  Google Scholar 

  6. Scheckler E W, Neureuther A R. Models and algorithms for three-dimensional topography simulation with SAMPLE-3D. IEEE Trans Comput Aided Design Integr Circ Syst, 1994, 13(2): 219–229

    Article  Google Scholar 

  7. Kenny K H T, Neureuther A R, Scheckler E W. Algorithms for simulation of three-dimensional etching. IEEE Trans Comput Aided Design Integr Circ Syst, 1994, 13(5): 616–624

    Article  Google Scholar 

  8. Karafyllidis I. A Three-dimensional photoresist etching simulator for TCAD. Modeling Simul Mater Sci Eng, 1999, 7(2): 157–167

    Article  Google Scholar 

  9. Neumann V J. Theory of Self-reproducing Automata. Urbana: Uniersity of Illinois Press, 1966. 130–180

    Google Scholar 

  10. Wolfram S. Statistical mechanics of cellular automata. Rev Mod Phys, 1983, 55(3): 601–640

    Article  MathSciNet  Google Scholar 

  11. Wolfram S. Cellular automata as models of complexity. Nature, 1984, 311(4): 419–422

    Article  Google Scholar 

  12. Karafyllidis I, Hagouel P I, Thanailakis A, et al. An efficient photoresist development simulator based on cellular automata with experimental verification. IEEE Trans Semicond Manuf, 2000, 13(1): 61–75

    Article  Google Scholar 

  13. Zhu Z, Liu C. Simulation of anisotropic crystalline etching using a continuous cellular automata algorithm. J Comput Mod Eng Sci, 2000, 1(1): 11–20

    Google Scholar 

  14. Kansal A R, Torquato S. Simulated brain tumor growth dynamics using a three-dimentional cellular automata. J Theor Bio, 2000, 203: 367–382

    Article  Google Scholar 

  15. Zhou Z F, Huang Q A, Li W H, et al. A two dimensional dynamic cellular automata model for simulation of photoresist etching process. In: Proceedings of ICSICT’2004, Beijing, 2004. 1076–1079

  16. Ferguson R A. Modeling and simulation of reaction kinetics in advanced resist processes for optical lithography. Ph. D Thesis. California: University of California, Berkeley, 1991

    Google Scholar 

  17. Roberson S, Mack C A, Maslow M. Towards a universal resist dissolution model for lithography simulation. Proc SPIE, 2001, 4004: 111–122

    Article  Google Scholar 

  18. Jakatdar N, Bao J W, Spanos C J, et al. A parameter extraction framework for DUV lithography simulation. Proc SPIE, 1999, 3677: 447–456

    Article  Google Scholar 

  19. Jakatdar N, Niu X H, Spanos C J. Characterization of a chemically amplified photoresist for simulation using a modified “poor man’s DRM” methodology. Proc SPIE, 1998, 3332: 578–585

    Article  Google Scholar 

  20. Erdmann A, Henke W, Robertson S, et al. Comparison of simulation approaches for chemically amplified resists. Proc SPIE, 2001, 4404: 99–110

    Article  Google Scholar 

  21. Baluswamy P, Weatherly A, Kewley D, et al. Practical resist model calibration. Proc SPIE, 2003, 5040: 1556–1569

    Article  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Key Laboratory of MEMS of the Ministry of Education, Southeast University, Nanjing, 210096, China

    Zhou ZaiFa, Huang QingAn, Li WeiHua & Lu Wei

Authors
  1. Zhou ZaiFa
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Huang QingAn
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. Li WeiHua
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. Lu Wei
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to Huang QingAn.

Additional information

Supported by the National Outstanding Young Scientists Foundation of China (Grant No. 50325519)

Rights and permissions

Reprints and permissions

About this article

Cite this article

Zhou, Z., Huang, Q., Li, W. et al. Numerical study on photoresist etching processes based on a cellular automata model. SCI CHINA SER E 50, 57–68 (2007). https://doi.org/10.1007/s11431-007-0005-5

Download citation

  • Received:

  • Accepted:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s11431-007-0005-5

Keywords

Search

Navigation