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A Ga2O·11Al2O3 nanonet prepared by interfacial reaction growth approach and its application in fabricating GaN nanowires

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Abstract

A Ga2O·11Al2O3 nanonet was synthesized by using Ga2O3 powder as the precursor to generate Ga2O vapor in H2 atmosphere which further reacted with Al2O3 at 730 °C to form Ga2O·11Al2O3 at the interfaces of a porous anodic aluminum oxide (AAO) template. The prepared Ga2O·11Al2O3 nanonet then served as a Ga2O-stablizing reservoir to fabricate single crystal GaN nanowires. The residual Ga2O3 powder at the surface of the produced Ga2O·11Al2O3 nanonet and the metallic Ga or Ga2O from the Ga2O·11Al2O3 decomposition reacted with ammonia to yield GaN nanowires at 780 °C. The reaction mechanisms were investigated.

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Authors and Affiliations

  1. Beijing National Laboratory for Molecular Sciences, Peking University, Beijing, 100871, China

    Yu Wang, Wen Wen & Kai Wu

  2. State Key Laboratory for Structural Chemistry of Unstable and Stable Species, Peking University, Beijing, 100871, China

    Yu Wang, Wen Wen & Kai Wu

  3. College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, China

    Yu Wang, Wen Wen & Kai Wu

Authors
  1. Yu Wang
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  2. Wen Wen
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  3. Kai Wu
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Correspondence to Kai Wu.

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Wang, Y., Wen, W. & Wu, K. A Ga2O·11Al2O3 nanonet prepared by interfacial reaction growth approach and its application in fabricating GaN nanowires. Sci. China Chem. 53, 438–444 (2010). https://doi.org/10.1007/s11426-010-0066-3

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  • DOI: https://doi.org/10.1007/s11426-010-0066-3

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