The adsorption of water vapor on the Si(100) surface was found to proceed with formation of a charged form of an adsorption complex using the transverse acoustoelectric effect in the layered piezodielectric/air-gap/semiconductor structure. The sign of the localized surface charge is a function of the formation of silicon oxide and changes from positive to negative in going from the crystalline silicon(100) surface to the oxide-coated surface. Discrete states of the surface charge were observed.
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This work was carried out with the support of Project No. 1.3.4/5 “State targeted science and technology program on the development of sensor products for 2008–2017.”
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Translated from Teoreticheskaya i Éksperimental’naya Khimiya, Vol. 51, No. 3, pp. 163–169, May-June, 2015.
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Gromashevskii, V.L., Tatyanenko, N.P. & Snopok, B.A. Effect of the Formation of Silicon Oxide on the Sign, Magnitude and Formation of Surface Charge Upon Water Adsorption on a Silicon Surface. Theor Exp Chem 51, 170–176 (2015). https://doi.org/10.1007/s11237-015-9412-z
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DOI: https://doi.org/10.1007/s11237-015-9412-z