The paper focuses on two parallel high gain photoconductive semiconductor switches at their maximum operating voltage of 32 kV. Switching is performed by single-pulse laser radiation (λ = 355 nm) with the energy of 140 mJ. Two opposite sides of the switchboard crystals are irradiated by the direct and reflected laser from the chamber wall. During the experiment, the output pulse is generated with 38 ns half-height duration, 6.81 kV maximum voltage, and 1.15 ns pulse rise. The filament formation at the reflected radiation on the reverse side of the crystal is not observed, unlike the case with the direct radiation on the front side of the crystal.
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Barmin, V.V., Puchikin, A.V. & Romanchenko, I.V. Switching Parameters of Two Parallel Photoconductive Switches Under 355 nm Laser Radiation. Russ Phys J 66, 1011–1016 (2023). https://doi.org/10.1007/s11182-023-03037-5
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DOI: https://doi.org/10.1007/s11182-023-03037-5