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Manufacturing and Properties of Ferromagnetic Aluminum Nitride Doped with Nonmagnetic Impurities

  • PHYSICS OF SEMICONDUCTORS AND DIELECTRICS
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Russian Physics Journal Aims and scope

The review of literature on AlN doping with nonmagnetic impurities (elements of groups I, II, III, and IV of both subgroups and rare earth elements), providing ferromagnetic properties, is presented. The magnetic and electrical properties of AlN are considered in detail. It follows from theoretical and experimental investigations that AlN doped with nonmagnetic impurities has ferromagnetic properties at temperatures above room temperature and is a promising material for spintronics.

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Authors and Affiliations

  1. National Research Tomsk State University, Tomsk, Russia

    S. S. Khludkov, I. A. Prudaev, O. P. Tolbanov & I. V. Ivonin

  2. National Research Tomsk Polytechnic University, Tomsk, Russia

    L. O. Root

Authors
  1. S. S. Khludkov
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  2. I. A. Prudaev
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  3. L. O. Root
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  4. O. P. Tolbanov
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  5. I. V. Ivonin
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Corresponding author

Correspondence to S. S. Khludkov.

Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 6, pp. 3–16, June, 2022.

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Khludkov, S.S., Prudaev, I.A., Root, L.O. et al. Manufacturing and Properties of Ferromagnetic Aluminum Nitride Doped with Nonmagnetic Impurities. Russ Phys J 65, 909–923 (2022). https://doi.org/10.1007/s11182-022-02714-1

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