Skip to main content
SpringerLink
Log in

Gallium nitride as a material for spintronics

  • Published:
Russian Physics Journal Aims and scope

The literature on the magnetic properties of GaN doped with magnetic impurities: the transition metals (Mn, Cr, Fe, Ni, and V) and rare earth elements (Gd, Eu, and Sm), as well as gallium nitride containing high concentration of gallium vacancies and quantum dots is reviewed. The properties of GaN doped by ion implantation and during the MBE and MOVPE growth of layers are considered. The undoped GaN and GaN films doped with the transition metals and rare earth elements often retain ferromagnetic properties at room temperature.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. B. P. Zakharchenya and V. L. Korenev, Usp. Fiz. Nauk, 175, No. 6, 629 (2005).

    Article  Google Scholar 

  2. I. Zutic, J. Fabian, and S. Das Sarma, Rev. Mod. Phys., 76, 323 (2004).

    Article  ADS  Google Scholar 

  3. T. Dietl, H. Ohno, F. Matsukura, et al., Magn. Semicond. Sci., 287, 1019 (2000).

    Google Scholar 

  4. I. T. Yoon and J. M. Myoung, Physica E, 40, 3009 (2008).

    Article  ADS  Google Scholar 

  5. T. Miura, Y. Yamamoto, S. Itaya, et al., Physica B, 346, 402 (2004).

    Article  ADS  Google Scholar 

  6. Y. B. Byeun, Han K-S., and Choi S-C, Mater. Sci. Eng. A, 452, 499 (2007).

    Google Scholar 

  7. Y. Shon, S. Lee, H. C. Jeon, et al., Mater. Sci. Eng. B, B146, 196 (2008).

    Article  Google Scholar 

  8. P. P. Chen, H. Makino, J. J. Kim, et al., J. Cryst. Growth, 251, 331 (2003).

    Article  ADS  Google Scholar 

  9. Z. Sofer, D. Sedmidubsky, J. Stejskal, et al., J. Cryst. Growth, 310, 5025 (2008).

    Article  ADS  Google Scholar 

  10. D. M. G. Leite, L. F. da Silva, and A. L. J. Pereira, J. Cryst. Growth, 294, 309 (2006).

    Article  ADS  Google Scholar 

  11. N. Theodoropoulou, A. F. Hebard, et al., Appl. Phys. Lett., 78, 3475 (2001).

    Article  ADS  Google Scholar 

  12. M. L. Reed, N. A. El-Masry, et al., Appl. Phys. Lett., 79, 3473 (2001).

    Article  ADS  Google Scholar 

  13. N. Tandon, G. P. Das, and A. Kshirsagar, Phys. Rev. B, 77, 205206 (2008).

    Article  ADS  Google Scholar 

  14. K. Sato, W. Schweika, P. H. Dederichs, et al., Phys. Rev. B, 70, 201202 (2004).

    Article  ADS  Google Scholar 

  15. W. Weber, S. D. Ganichev, S. N. Danilov, et al., Appl. Phys. Lett., 87, 262106 (2005).

    Article  ADS  Google Scholar 

  16. G. P. Das, B. K. Rao, and P. Jena, Phys. Rev. B, 69, 214422 (2004).

    Article  ADS  Google Scholar 

  17. Yu. E. Kitaev and P. Tronc, Fiz. Tekh. Poluprovodn., 54, No. 3, 490 (2012).

    Google Scholar 

  18. J. S. Lee, J. D. Lim, Z. G. Khim, et al., Appl. Phys., 93, 4512 (2003).

    Google Scholar 

  19. Y. S. Cho, H. Hardtdegen, N. Kaluza, et al., J. Cryst. Growth, 312, 1 (2009).

    Article  ADS  Google Scholar 

  20. A. F. Orlov, L. A. Balagurov, et al., Fiz. Tverd. Tela, 54, No. 2, 267 (2012).

    Google Scholar 

  21. H. X. Liu, S. Y. Wu, R. K. Singh, et al., Appl. Phys. Lett., 85, 4076 (2004).

    Article  ADS  Google Scholar 

  22. S. E. Park, H.-J. Lee, Y. C. Cho, et al., Appl. Phys. Lett., 80, 22 (2002).

    Article  Google Scholar 

  23. J. E. Medvedeva, A. J. Freeman, X. Y. Cui, et al., Phys. Rev. Lett., 94, 146602 (2005).

    Article  ADS  Google Scholar 

  24. S. Y. Wu, H. X. Liu, L. Gu, et al., Appl. Phys. Lett., 82, 18 (2003).

    Google Scholar 

  25. S. G. Yang, A. B. Pakhomov, S. T. Hung, et al., Appl. Phys. Lett., 81 13 (2002).

    Article  Google Scholar 

  26. D. Kumar, J. Antifakos, M. G. Blamire, et al., Appl. Phys. Lett.,84, 24 (2004).

    Google Scholar 

  27. H. Morkoc, Handbook of Nitride Semiconductors and Devices, V. 2: Electronic and Optical Processes in Nitrides, WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim (2008).

    Book  Google Scholar 

  28. S. J. Pearton, C. R. Abemathy, M. E. Overberg, et al., Appl. Phys., 93, 1 (2003).

    Google Scholar 

  29. S. Sonoda, S. Shimizu, T. Sasaki, et al., J. Cryst. Growth, 237–239, 1358 (2002).

    Article  Google Scholar 

  30. R. Wang, A. J. Steckl, N. Nepal, et al., J. Appl. Phys., 107, 013901 (2010).

    Article  ADS  Google Scholar 

  31. N. Teraguchi, A. Suzuki, Y. Nanishi, et al., Solid State Commun., 122, No. 12, 651 (2002).

    Article  ADS  Google Scholar 

  32. S. Dhar, O. Brandt, M. Ramsteiner, et al., Phys. Rev. Lett., 94, No. 3, 1 (2009).

    Google Scholar 

  33. R. P. Davies, B. P. Gila, C. R. Abernathy, et al., Appl. Phys. Lett., 96, 212502 (2010).

    Article  ADS  Google Scholar 

  34. M. A. Khaderbad, S. Dhar, L. Perez, et al., Appl. Phys. Lett., 91, 072514 (2007).

    Article  ADS  Google Scholar 

  35. M. Kapilashrami, J. Xu, K. V. Rao1, et al., J. Phys.: Condens. Matter., 22, 345004 (2010).

    Google Scholar 

  36. B. Roul, M. K. Rajpalke, T. N. Bhat, et al., Appl. Phys. Lett., 99, 162512 (2011).

    Article  ADS  Google Scholar 

  37. C. Madhu, A. Sundaresan, C. N. R. Rao, et al., Phys. Rev. B, 77, 201306(R) (2008).

    Article  ADS  Google Scholar 

  38. H. Jin, Y. Dai, B. B. Huang, et al., Appl. Phys. Lett., 94, 16250 (2009).

    Google Scholar 

  39. J. Hite, G. T. Thaler, R. Khanna, et al., Appl. Phys. Lett., 89, 132119 (2006).

    Article  ADS  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. V. D. Kuznetsov Siberian Physical-Technical Institute at National Research Tomsk State University, Tomsk, Russia

    S. S. Khludkov, I. A. Prudaev & О. P. Тоlbanov

Authors
  1. S. S. Khludkov
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. I. A. Prudaev
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. О. P. Тоlbanov
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to S. S. Khludkov.

Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 8, pp. 44–49, August, 2012.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Khludkov, S.S., Prudaev, I.A. & Тоlbanov, О.P. Gallium nitride as a material for spintronics. Russ Phys J 55, 903–909 (2013). https://doi.org/10.1007/s11182-013-9899-5

Download citation

  • Received:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s11182-013-9899-5

Keywords

Search

Navigation