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Formation of Double Steps on Si (100): Effect of Permeability of the A-Steps

  • PHYSICS OF SEMICONDUCTORS AND DIELECTRICS
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Russian Physics Journal Aims and scope

A model of the elementary step motion on a two-domain (100) silicon surface during crystallization from a molecular beam is proposed. The model takes into account the possibility of an adatom transition to an adjacent terrace before incorporation into a kink at the A-step edge (the effect of the A-step permeability). It is shown that the permeability of the A-step contributes to the faster pairing of the A- and B-steps and, consequently, transition to a single-domain surface. For the fast pairing of the steps, it is sufficient only the presence of an inverse Ehrlich–Schwoebel barrier for the attachment of adatoms to the A-step from the B-type terrace. A conventional barrier (for the attachment from the A-type terrace) may be absent, which is consistent with the results of quantum chemical calculations.

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Authors and Affiliations

  1. National Research Tomsk State University, Tomsk, Russia

    Yu. Yu. Hervieu

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  1. Yu. Yu. Hervieu
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Correspondence to Yu. Yu. Hervieu.

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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 6, pp. 3–7, June, 2020.

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Hervieu, Y.Y. Formation of Double Steps on Si (100): Effect of Permeability of the A-Steps. Russ Phys J 63, 901–906 (2020). https://doi.org/10.1007/s11182-020-02116-1

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  • DOI: https://doi.org/10.1007/s11182-020-02116-1

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