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Diffusion of Magnesium in Led Structures with InGaN/GaN Quantum Wells at True Growth Temperatures 860–980°C of p-GaN

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Russian Physics Journal Aims and scope

The results of an investigation of Mg diffusion in blue LED structures with InGaN/GaN quantum wells are presented for various growth temperatures of the p-GaN layer. The values of the diffusion coefficient estimated for true growth temperatures of 860, 910, and 980°C were 7.5·10–17, 2.8·10–16, and 1.2·10–15 cm2/s, respectively. The temperature values given in the work were measured on the surface of the growing layer in situ using a pyrometer. The calculated activation energy for the temperature dependence of the diffusion coefficient was 2.8 eV.

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Authors and Affiliations

  1. National Research Tomsk State University, Tomsk, Russia

    I. S. Romanov, I. A. Prudaev & V. N. Brudnyi

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  1. I. S. Romanov
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  2. I. A. Prudaev
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  3. V. N. Brudnyi
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Correspondence to I. S. Romanov.

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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 1, pp. 164–166, January, 2018.

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Romanov, I.S., Prudaev, I.A. & Brudnyi, V.N. Diffusion of Magnesium in Led Structures with InGaN/GaN Quantum Wells at True Growth Temperatures 860–980°C of p-GaN. Russ Phys J 61, 187–190 (2018). https://doi.org/10.1007/s11182-018-1383-9

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  • DOI: https://doi.org/10.1007/s11182-018-1383-9

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