We present the results of experimental studies of internal quantum efficiency of photoluminescence of blue LED heterostructures based on multiple InxGa1–xN/GaN quantum wells with short-period InyGa1–yN/GaN superlattices containing small amounts of In at high levels of optical pumping. Introduction of an InyGa1–yN/GaN superlattice from the side of the n-region of a LED InxGa1–xN/GaN heterostructure allows to increase the value of its internal quantum efficiency presumably by reducing the quantum-confined Stark effect and Auger recombination rate.
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 7, pp. 19–22, July, 2016.
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Prudaev, I.A., Romanov, I.S., Kopyev, V.V. et al. Effect of a Short-Period InGaN/GaN Superlattice on the Efficiency of Blue LEDs at High Level of Optical Pumping. Russ Phys J 59, 934–937 (2016). https://doi.org/10.1007/s11182-016-0856-y
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DOI: https://doi.org/10.1007/s11182-016-0856-y