Skip to main content
SpringerLink
Log in

Stability of Electrical Characteristics of MOS Structures Based on Gallium Oxide

  • PHYSICS OF SEMICONDUCTORS AND DIELECTRICS
  • Published:
Russian Physics Journal Aims and scope

We present the results of studying the capacitance-voltage and conductance-voltage characteristics of the GaxOy/GaAs-based metal – oxide – semiconductor structures obtained by thermal evaporation. Influence of the annealing temperature on the characteristics of the structures is established. It is found that at long-term storage in the room atmosphere, the structures do not change their properties, which is manifested in the stability of electrical characteristics.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. R. Wakabayashi, T. Oshima, M. Hattori, et al., Int. Workshop on Gallium Oxide and Related Materials (Abstract Book), Kyoto (Japan), abstract No. C6 (2015).

  2. A. N. Zarubin, V. M. Kalygina, Yu. S. Petrova, et al., Fiz. Tekh. Poluprovodn., 47, No. 8, 1137–1143 (2013).

    Google Scholar 

  3. B. L. Sharma and R. K. Purokhit, Semiconductor Heterojunctions [Russian translation], Sov. Radio, Moscow (1979).

    Google Scholar 

  4. A. Kuramata, T. Masui, K. Koshi, et al., Int. Workshop on Gallium Oxide and Related Materials (Abstract Book), Kyoto (Japan), abstract No. B2 (2015).

  5. K. Akaiwa, K. Kaneko, and S. Fujita, Int. Workshop on Gallium Oxide and Related Materials (Abstract Book), Kyoto (Japan), abstract No. E8 (2015).

  6. E. G. Víllora, K. Shimamura, Y. Yoshikawa, et al., Appl. Phys. Lett., 92, article No. 202120 (2008).

  7. J. B. Varley, J. R. Weber, A. Janotti, and C. G. Van de Walle, Appl. Phys. Lett., 97, article No. 142106 (2010).

  8. V. M. Kalygina, V. V. Vishnikina, A. N. Zarubin, et al., Russ. Phys. J., 56, No.9, 984–989 (2014).

Download references

Author information

Authors and Affiliations

  1. National Research Tomsk State University, Tomsk, Russia

    V. M. Kalygina, Yu. S. Petrova, I. A. Prudaev & O. P. Tolbanov

Authors
  1. V. M. Kalygina
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Yu. S. Petrova
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. I. A. Prudaev
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. O. P. Tolbanov
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to V. M. Kalygina.

Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 6, pp. 3–6, June, 2016.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Kalygina, V.M., Petrova, Y.S., Prudaev, I.A. et al. Stability of Electrical Characteristics of MOS Structures Based on Gallium Oxide. Russ Phys J 59, 757–761 (2016). https://doi.org/10.1007/s11182-016-0833-5

Download citation

  • Received:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s11182-016-0833-5

Keywords

Search

Navigation