The results of experimental studies of forward current-voltage characteristics of LEDs with an active region consisting of the multiple (Al x Ga1–x )0.5In0.5P/(Al0.54Ga0.46)0.5In0.5P quantum wells are presented. The experiment showed that increasing the number of quantum wells and decreasing the Al content in the Al x Ga1–x solid solution lead to an increase in the forward current at a fixed voltage. An analysis showed that the results obtained can be interpreted using the theory of diffusion charge transport in a double heterostructure with a narrow-bandgap layer, the thickness of which is many times larger than the thickness of a single quantum well. The proposed approach takes into account the carrier transport by tunneling through the barriers in an active region with multiple quantum wells.
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 7, pp. 48–51, July, 2014.
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Prudaev, I.A., Oleinik, V.L., Romanov, I.S. et al. Charge Carrier Transport in LEDs Based on Multiple (Al x Ga1–x )0.5In0.5P/(Al0.54Ga0.46)0.5In0.5P Quantum Wells. Russ Phys J 57, 915–919 (2014). https://doi.org/10.1007/s11182-014-0324-5
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DOI: https://doi.org/10.1007/s11182-014-0324-5