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Effect of Magnesium Diffusion Into the Active Region of LED Structures with InGaN/GaN Quantum Wells on Internal Quantum Efficiency

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Russian Physics Journal Aims and scope

The results of experimental studies of the dependence of an internal quantum efficiency of blue LED structures with multiple InGaN/GaN quantum wells on the growth temperature of a p-GaN layer are presented. The effect of the magnesium diffusion on the photoluminescence characteristics of LED structures is discussed.

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Authors and Affiliations

  1. National Research Tomsk State University, Tomsk, Russia

    I. S. Romanov & I. A. Prudaev

  2. “SigmPlyus” Ltd, Moscow, Russia

    А. А. Marmalyuk, V. A. Kureshov, D. R. Sabitov & А. V. Маzalov

Authors
  1. I. S. Romanov
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  2. I. A. Prudaev
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  3. А. А. Marmalyuk
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  4. V. A. Kureshov
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  5. D. R. Sabitov
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  6. А. V. Маzalov
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Corresponding author

Correspondence to I. S. Romanov.

Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 4, pp. 99–101, April, 2014.

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Romanov, I.S., Prudaev, I.A., Marmalyuk, А.А. et al. Effect of Magnesium Diffusion Into the Active Region of LED Structures with InGaN/GaN Quantum Wells on Internal Quantum Efficiency. Russ Phys J 57, 533–535 (2014). https://doi.org/10.1007/s11182-014-0271-1

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  • DOI: https://doi.org/10.1007/s11182-014-0271-1

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