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An Investigation into the Admittance of MIS-Structures Based on MBE HgCdTe with Quantum Wells

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Russian Physics Journal Aims and scope

The results of investigations into the complex admittance of the MIS-structures based on heteroepitaxial MBE Hg1–x Cd x Te with quantum wells (QW) in the test-signal frequency range 1 kHz – 2 МHz at temperatures 8–300 K are reported. The thickness of single HgTe QWs was 5.6 and 7.1 nm, the content in the 35-nm thick barrier layers – 0.65 and 0.62, respectively.

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Authors and Affiliations

  1. V. D. Kuznetsov Siberian Physical-Technical Institute at the National Research Tomsk State University, Tomsk, Russia

    S. M. Dzyadukh, A. V. Voitsekhovskii, S. N. Nesmelov & D. I. Gorn

  2. National Research Tomsk State University, Tomsk, Russia

    A. V. Voitsekhovskii

  3. Semiconductor Physics Institute of the Siberian Branch of the Russian Academy of Sciences, Novosibirsk, Russia

    S. A. Dvoretskii & N. N.Mikhailov

Authors
  1. S. M. Dzyadukh
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  2. A. V. Voitsekhovskii
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  3. S. N. Nesmelov
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  4. S. A. Dvoretskii
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  5. N. N.Mikhailov
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  6. D. I. Gorn
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Corresponding author

Correspondence to S. M. Dzyadukh.

Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 7, pp. 50–56, July, 2013.

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Dzyadukh, S.M., Voitsekhovskii, A.V., Nesmelov, S.N. et al. An Investigation into the Admittance of MIS-Structures Based on MBE HgCdTe with Quantum Wells. Russ Phys J 56, 778–784 (2013). https://doi.org/10.1007/s11182-013-0099-0

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  • DOI: https://doi.org/10.1007/s11182-013-0099-0

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