The influence of the defects induced by fast-neutron irradiation on the rate of charge-carrier removal in nuclear-doped silicon (p-Si < B, P>) and a test p-Si < B > sample is studied by measuring the Hall coefficient and resistivity at room temperature. It is shown that the rate of removal of charge carriers in p-Si < B, P > is higher than that in p-Si < B>. A barrier model is developed to explain the observed effect.
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 5, pp. 75–78, May, 2011.
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Karimov, M., Makhkamov, S., Tursunov, N.A. et al. The effect of fast neutrons on the electrophysical properties of nuclear-doped p-silicon. Russ Phys J 54, 589–593 (2011). https://doi.org/10.1007/s11182-011-9656-6
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DOI: https://doi.org/10.1007/s11182-011-9656-6