Recently much attention has been paid to detailed examination of fundamental properties of Ge/Si heterostructures with Ge nanoclusters. In this work, we consider possible applications of the structures with Ge quantum dots in silicon optoelectonic and microwave devices. The atomic and molecular processes of formation of quantum-dot arrays under molecular-beam epitaxy are studied experimentally. It is found that superstructure and surface morphlogy affect nanocluster ordering in the lateral direction. A possibility of developing a reproducible technology for production of devices on the basis of epitaxial Ge/Si nanoheterostructures with an ordered Ge-nanocluster ensemble is discussed.
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 9, pp. 59–64, September, 2010.
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Pchelyakov, O.P., Dvurechenskii, A.V., Nikiforov, A.I. et al. Ge/Si nanoheterostructures with ordered Ge quantum dots for optoelectronic applications. Russ Phys J 53, 943–948 (2011). https://doi.org/10.1007/s11182-011-9514-6
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DOI: https://doi.org/10.1007/s11182-011-9514-6