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Measurement of the electron saturation velocity in an AlGaAs/InGaAs quantum well

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The dependence of the average electron-drift velocity on the electric field strength is measured for a twodimensional electron gas in a quantum well of an AlGaAs/InGaAs heterostructure in the temperature range 200–400 K. It is shown that the saturation velocity varies from 1.55·107 to 1.3·107 cm/s in this temperature range and substantially exceeds the velocity in bulk gallium arsenide.

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Authors and Affiliations

  1. National Research Tomsk State University, Tomsk, Russia

    G. I. Ayzenshtat

  2. Institute of Semiconductor Devices, Tomsk, Russia

    V. G. Bozhkov & A. Yu. Yushchenko

Authors
  1. G. I. Ayzenshtat
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  2. V. G. Bozhkov
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  3. A. Yu. Yushchenko
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Corresponding author

Correspondence to G. I. Ayzenshtat.

Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 9, pp. 34–39, September, 2010.

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Ayzenshtat, G.I., Bozhkov, V.G. & Yushchenko, A.Y. Measurement of the electron saturation velocity in an AlGaAs/InGaAs quantum well. Russ Phys J 53, 914–919 (2011). https://doi.org/10.1007/s11182-011-9510-x

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  • DOI: https://doi.org/10.1007/s11182-011-9510-x

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