The electric-field strength profiles are calculated for the structures used in X-ray detectors produced by diffusion of the deep acceptor Cr impurity into an n-GaAs epitaxial layer. The effects of diffusion temperature, external bias, and the ratio of electron and hole emission coefficients on the distribution of electric-field strength in the structure are examined.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
G. I. Ayzenshtat, M. D. Vilisova, E. P. Drugova, et al., Zh. Tekh. Fiz., 76, No. 8, 46–49 (2006).
M. D. Vilisova, V. P. Germogenov, E. P. Drugova, et al., Proc. Conf. “GaAs-2006”, Tomsk (2006).
M. D. Vilisova, E. P. Drugova, I. V. Ponomarev, et al., Fiz. Tekh. Polupr., 42, No. 2, 239–242 (2008).
G. M. Martin, A III B V Semiconductor Compounds [Russian translation], Metallurgiya, Moscow (1984).
V. I. Fistul', Introduction to Semiconductor Physics [in Russian], Vysshaya Shkola, Moscow (1984).
V. I. Gaman, Physics of Semiconductor Devices, Izd. NTL, Tomsk (2000).
Author information
Authors and Affiliations
Corresponding author
Additional information
Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 9, pp. 102–106, September, 2008.
Rights and permissions
About this article
Cite this article
Germogenov, V.P., Ponomarev, I.V. Calculation of electric-field strength profiles in GaAs:Cr epitaxial-diffusion structures. Russ Phys J 51, 994–999 (2008). https://doi.org/10.1007/s11182-009-9126-6
Received:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s11182-009-9126-6