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Concentration profiles during films deposition from a low-energy ion beam

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Abstract

An ion beam is described in the diffusion approximation, and a mathematical model of thin-film deposition process is developed. The volume profiles of concentration of components during nickel film deposition on a copper substrate are calculated for ion energies of 100, 200, and 400 eV and ion flux densities I = 1015, 1016, and 1017cm−2·s−1. The deposition model parameters are estimated using programs SUSPRE and SRIM. The concentration profiles of the components are compared for the corresponding numerical values of the model parameters.

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Authors and Affiliations

  1. Zaporozhskii National Technical University, Russia

    V. I. Kiprich & G. V. Kornich

  2. Donetsk National University, Russia

    A. I. Bazhin

Authors
  1. V. I. Kiprich
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  2. G. V. Kornich
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  3. A. I. Bazhin
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Corresponding authors

Correspondence to V. I. Kiprich or G. V. Kornich.

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__________

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 3, pp. 27–34, March, 2007.

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Kiprich, V.I., Kornich, G.V. & Bazhin, A.I. Concentration profiles during films deposition from a low-energy ion beam. Russ Phys J 50, 228–235 (2007). https://doi.org/10.1007/s11182-007-0031-6

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  • DOI: https://doi.org/10.1007/s11182-007-0031-6

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