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Electric Instability in n-CdTe:In Layers with S-Shaped Voltage-Current Characteristics

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Abstract

A switching of the S-type in the 20–200 µm thick polycrystalline n-CdTe:In layers with resistance of 103–106 Ω·cm is studied. The electric instability in the layers is found to be due to the electron-thermal breakdown mechanism. The dependence of the switching threshold parameters on the intensity of exposure can be used for fabrication of infrared-radiation controlled electric switches on the basis of n-CdTe:In layers.

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Authors and Affiliations

  1. Pridnestrovsk State University, Russia

    E. A. Senokosov, A. L. Makarevich & V. V. Sorochan

Authors
  1. E. A. Senokosov
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  2. A. L. Makarevich
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  3. V. V. Sorochan
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 6, pp. 28–30, June, 2005.

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Senokosov, E.A., Makarevich, A.L. & Sorochan, V.V. Electric Instability in n-CdTe:In Layers with S-Shaped Voltage-Current Characteristics. Russ Phys J 48, 581–583 (2005). https://doi.org/10.1007/s11182-005-0173-3

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  • DOI: https://doi.org/10.1007/s11182-005-0173-3

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