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Influence of the uniaxial pressure on the critical temperature of the Peierls-type metal-semiconductor phase transition

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Abstract

Within the framework of the mean-field approximation, the critical temperature shift coefficient for metal-semiconductor phase transition under uniaxial pressure is calculated with allowance for the cubic anharmonicity of interatomic interaction. A comparison with the experiment carried out for vanadium dioxide is conducted.

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Authors and Affiliations

  1. Ul’yanov State University, Ul’yanovka

    A. L. Semenov & M. Sh. Sharapov

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  1. A. L. Semenov
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  2. M. Sh. Sharapov
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 10, pp. 73–75, October, 2004.

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Semenov, A.L., Sharapov, M.S. Influence of the uniaxial pressure on the critical temperature of the Peierls-type metal-semiconductor phase transition. Russ Phys J 47, 1044–1047 (2004). https://doi.org/10.1007/s11182-005-0019-z

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  • DOI: https://doi.org/10.1007/s11182-005-0019-z

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