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Microwave Detectors Based on Low-Barrier Planar Schottky Diodes and Their Characteristics

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Radiophysics and Quantum Electronics Aims and scope

Abstract

We develop the design and technology principles for manufacturing sensitive microwave detectors based on Schottky diodes with reduced effective barrier height (up to 0. 2–0. 3 eV). A family of diodes and broadband detectors on their basis with sensitivity from 1000 to 5000 V/W and threshold power 10−11 W · Hz−1/2 in the short-wavelength part of the millimeter waveband, operated without constant bias is produced. A fairly exact description of the detector characteristics is obtained from calculations by a simple detecting model allowing for the capacitance and series spreading resistance of the diode. This method allows us to obtain a reliable dependence of the capacitance (reactive impedance) on the voltage for diodes working in the detection mode in the short-wave part of millimeter wavelengths.

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Authors and Affiliations

  1. Institute of Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, Russia

    V. I. Shashkin, V. L. Vaks, V. M. Danil'tsev, A. V. Maslovsky, A. V. Murel, S. D. Nikiforov, O. I. Khrykin & Yu. I. Chechenin

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  1. V. I. Shashkin
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  2. V. L. Vaks
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  3. V. M. Danil'tsev
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  4. A. V. Maslovsky
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  5. A. V. Murel
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  6. S. D. Nikiforov
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  7. O. I. Khrykin
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  8. Yu. I. Chechenin
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Radiofizika, Vol. 48, No. 6, pp. 544–551, June 2005.

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Shashkin, V.I., Vaks, V.L., Danil'tsev, V.M. et al. Microwave Detectors Based on Low-Barrier Planar Schottky Diodes and Their Characteristics. Radiophys Quantum Electron 48, 485–490 (2005). https://doi.org/10.1007/s11141-005-0092-8

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  • DOI: https://doi.org/10.1007/s11141-005-0092-8

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