Abstract
Design and manufacturing technology of high-power microwave Schottky photodiodes with microstripe leads have been developed based on an InAlAs/InGaAs heterostructure. The operating frequency of photodiodes with a mesa diameter of 15 μm is above 25 GHz and a maximum output microwave power at 20 GHz exceeds 50 mW, which allows these photodiodes to be employed in analog fiber-optic microwave signal transmission lines, as well as for the microwave signal generation and processing by optical methods in remote sensing and measuring microwave technology.
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Funding
This work was performed in the framework of the Program of State Orders for Research, project no. 0306-2019-00008 “Heterostructures Based on A3B5 Semiconductor Materials for Microwave Electronics and Photoelectronics.”
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Translated by P. Pozdeev
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Chizh, A.L., Mikitchuk, K.B., Zhuravlev, K.S. et al. High-Power High-Speed Schottky Photodiodes for Analog Fiber-Optic Microwave Signal Transmission Lines. Tech. Phys. Lett. 45, 739–741 (2019). https://doi.org/10.1134/S1063785019070204
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DOI: https://doi.org/10.1134/S1063785019070204