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A new model for a mode-locked semiconductor laser

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Abstract

We consider a new model for passive mode locking in a semiconductor laser comprising a set of delay differential equations. Bifurcations leading to the appearance and break-up of the mode-locking regime are studied numerically.

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Authors and Affiliations

  1. Weierstrass Institute for Applied Analysis and Stochastics, Berlin, Germany

    A. G. Vladimirov

  2. St. Petersburg University, St. Petersburg, Russia

    A. G. Vladimirov

  3. Ben-Gurion University, Beer-Sheva, Israel

    D. V. Turaev

Authors
  1. A. G. Vladimirov
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  2. D. V. Turaev
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Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Radiofizika, Vol. 47, Nos. 10–11, pp. 857–865, October–November, 2004.

We wish to thank G. Kozyreff and E. A. Viktorov for fruitful discussions and useful recommendations.

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Vladimirov, A.G., Turaev, D.V. A new model for a mode-locked semiconductor laser. Radiophys Quantum Electron 47, 769–776 (2004). https://doi.org/10.1007/s11141-005-0015-8

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  • DOI: https://doi.org/10.1007/s11141-005-0015-8

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