Interfacial reactions between Cu and Se using Cu–Se diffusion couples are studied. The investigation is carried out at temperatures of 150°C and 200°C. Heat treated diffusion couples are examined by energy dispersive spectroscopy coupled with scanning electron microscopy, X-ray diffraction, and transmission electron microscopy. Different intermetallic compounds are found to form at the interface: CuSe 2 at 150°C, Cu 2 Se and CuSe 2 at 200°C. The growth kinetics of the intermetallic compounds is followed the parabolic law. The incubation time for the intermetallic compounds is calculated. The formation of intermetallic compounds and its implication for designing novel layered composite brass materials are briefly discussed.
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The authors are grateful to the National Natural Science Foundation of China for having financed this project (Grant No. 50974063).
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Published in Poroshkovaya Metallurgiya, Vol. 54, Nos. 1–2 (501), pp. 141–145, 2015.
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Yang, B., Jiang, H., Zhang, J. et al. Interfacial Reaction in Cu–Se Diffusion Couples at Low Temperatures. Powder Metall Met Ceram 54, 115–118 (2015). https://doi.org/10.1007/s11106-015-9687-6
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DOI: https://doi.org/10.1007/s11106-015-9687-6