Compact samples are produced from antimony-doped tin dioxide in a high-pressure cell at a hydrostatic pressure of 4 GPa and a temperature of 873 K. Pressure–temperature treatment has resulted in a material exhibiting high density and hardness. Its electrical and physical properties are studied. The temperature dependence of resistivity shows that the test material is a degenerate semiconductor with low (1.5 meV) activation energy.
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The study has been supported by the Science & Technology Center of Ukraine, Project No. 3927.
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Translated from Poroshkovaya Metallurgiya, Vol. 51, No. 3–4 (484), pp. 82–89, 2012.
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Gonchar, A.G., Rud’, B.M., Bykov, A.I. et al. Effect of pressure–temperature treatment on the properties of antimony-doped tin dioxide. Powder Metall Met Ceram 51, 191–197 (2012). https://doi.org/10.1007/s11106-012-9416-3
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DOI: https://doi.org/10.1007/s11106-012-9416-3