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A Comparative Study of HBr-Ar and HBr-Cl2 Plasma Chemistries for Dry Etch Applications

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Abstract

The effects of HBr/Ar and HBr/Cl2 mixing ratios in the ranges of 0–100% Ar or Cl2 on plasma parameters, densities of active species influencing the dry etch mechanisms were analyzed at fixed total gas flow rate of 40 sccm, total gas pressure of 6 mTorr, input power of 700 W and bias power of 300 W. The investigation combined plasma diagnostics by Langmuir probes and the 0-dimensional plasma modeling. It was found that the dilution of HBr by Ar results in maximum effect on the ion energy flux with expected impact on the etch rate in the ion-flux-limited etch regime, while the addition of Cl2 influences mainly the relative fluxes of Br and Cl atoms on the etched surface with expected impact on the etch rate in the reaction-rate-limited etch regime.

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Acknowledgment

This work was supported by a Korea University Grant.

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Authors and Affiliations

  1. Department of Electronic Devices and Materials Technology, State University of Chemistry and Technology, 7 F. Engels St., 153000, Ivanovo, Russia

    Alexander Efremov

  2. Department of Control and Instrumentation Engineering, Korea University, Jochiwon, Chungnam, 339-700, Korea

    Youngkeun Kim & Kwang-Ho Kwon

  3. Division of Electronic, Computer, and Communication Engineering, Hanseo University, Chungnam, 356-706, Korea

    Hyun-Woo Lee

Authors
  1. Alexander Efremov
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  2. Youngkeun Kim
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  3. Hyun-Woo Lee
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  4. Kwang-Ho Kwon
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Correspondence to Kwang-Ho Kwon.

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Efremov, A., Kim, Y., Lee, HW. et al. A Comparative Study of HBr-Ar and HBr-Cl2 Plasma Chemistries for Dry Etch Applications. Plasma Chem Plasma Process 31, 259–271 (2011). https://doi.org/10.1007/s11090-010-9279-7

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  • DOI: https://doi.org/10.1007/s11090-010-9279-7

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