Skip to main content
SpringerLink
Log in

Highly Selective and Low Damage Etching of GaAs/AlGaAs Heterostructure using Cl2/O2 Neutral Beam

  • Original Paper
  • Published:
Plasma Chemistry and Plasma Processing Aims and scope Submit manuscript

Abstract

Highly selective and low damage etching of the GaAs cap layer on AlGaAs is essential in fabricating GaAs/AlGaAs high electron mobility transistors. The GaAs on AlGaAs was etched using a low energy Cl2/O2 neutral beam and the Schottky device characteristics fabricated on the exposed AlGaAs were compared with those fabricated after the etching using wet etching and a Cl2/O2 ion beam. Using a low energy Cl2/O2 ion beam or a Cl2/O2 neutral beam, highly selective etching of the GaAs cap layer to AlGaAs similar to wet etching could be achieved through the formation of Al2O3 on the exposed AlGaAs during the etching. When the electrical characteristics of the Schottky devices were compared, the devices fabricated after the etching using the neutral beam showed the best electrical characteristics such as electrical stability, low leakage current, higher barrier height, etc. by showing low damage to the exposed AlGaAs surface.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Fig. 1
Fig. 2
Fig. 3
Fig. 4
Fig. 5

Similar content being viewed by others

References

  1. Wang H, Ng G (2003) IEEE Electron Device Lett 24:628

    Article  ADS  Google Scholar 

  2. Khatri R, Radhakrishnan K (2004) J Vac Sci Technol B 22:1653

    Article  Google Scholar 

  3. Khanna R, Stafford L, Pearton SJ, Wang HT, Ren F, Westermann R, Johnson D, Constantine C (2007) Electrochem Solid-State Lett 10:H139

    Article  Google Scholar 

  4. Wang CC, Lin YJ, Huang HK, Wu CL, Chang CS, Wang YH (2007) J Vac Sci Technol B 25:1284

    Article  Google Scholar 

  5. Nordheden KJ (1999) Electrochem Solid-State Lett 2:43

    Article  Google Scholar 

  6. Guggion WH, Ketterson AA, Andideh E, Hughes J, Adeside I, Caracci J, Kolodzey J (1990) J Vac Sci Technol B8:1956

    Google Scholar 

  7. Saliman S, Yuen C, Shih C, Cooper CB (1991) J Vac Sci Technol B 9:114

    Article  Google Scholar 

  8. Giapis KP, Moore TA, Minton TK (1995) J Vac Sci Technol A 13:959

    Article  ADS  Google Scholar 

  9. Mizutani T, Nishimatsu S (1988) J Vac Sci Technol A 6:1417

    Article  ADS  Google Scholar 

  10. Economou DJ (2008) J Phys D Appl Phys 41:024001

    Article  Google Scholar 

  11. Samukawa S, Sakamoto K, Ichiki K (2002) J Vac Sci Technol B 20:1566

    Article  ADS  Google Scholar 

  12. Park BJ, Kim SW, Kang SK, Min KS, Park SD, Kyung SJ, Lee HC, Bae JW, Lim JT, Lee DH, Yeom GY (2008) J Phys D Appl Phys 41:024005

    Article  Google Scholar 

  13. Min KS, Park BJ, Park JB, Kang SK, Lee DH, Yeom GY (2007) J Korean Phys Soc 51:967

    Article  Google Scholar 

  14. Zhang DH (1999) Mater Sci Eng B 60:189

    Article  Google Scholar 

Download references

Acknowledgments

This work was supported by the IT R&D program of MKE/KEIT [1003-4827], and by the World Class University program (Grant No. R32-2008-000-10124-0) and Basic Science Research Program (2010-0015035) of National Research Foundation of Korea.

Author information

Authors and Affiliations

  1. Department of Advanced Materials Engineering, Sungkyunkwan University, Suwon, South Korea

    B. J. Park, J. K. Yeon, J. W. Bae & G. Y. Yeom

  2. Sungkyun Advanced Institute of Nano Technology (SAINT), Suwon, South Korea

    W. S. Lim, S. K. Kang & G. Y. Yeom

  3. Department of Chemical Engineering, Carnegie Mellon University, 5000 Forbes Avenue, Pittsburgh, PA, 15213, USA

    M. S. Jhon

  4. School of Information and Mechatronics, Department of Nanobio Materials and Electronics, Gwangju Institute of Science and Technology, Gwangju, South Korea

    S. H. Shin, Y. T. Lee & J. H. Jang

  5. Korea Basic Science Institute Division of Instrument Development, Daedeok Headquarters 113, Gwahangno, Yusung-gu, Daejeon, South Korea

    K. S. Chang

  6. Center for Distributed Sensor Network, Department of Nanobio Materials and Electronics, Gwangju Institute of Science and Technology, Gwangju, South Korea

    J. I. Song

Authors
  1. B. J. Park
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. J. K. Yeon
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. W. S. Lim
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. S. K. Kang
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. J. W. Bae
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. G. Y. Yeom
    View author publications

    You can also search for this author in PubMed Google Scholar

  7. M. S. Jhon
    View author publications

    You can also search for this author in PubMed Google Scholar

  8. S. H. Shin
    View author publications

    You can also search for this author in PubMed Google Scholar

  9. K. S. Chang
    View author publications

    You can also search for this author in PubMed Google Scholar

  10. J. I. Song
    View author publications

    You can also search for this author in PubMed Google Scholar

  11. Y. T. Lee
    View author publications

    You can also search for this author in PubMed Google Scholar

  12. J. H. Jang
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to G. Y. Yeom.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Park, B.J., Yeon, J.K., Lim, W.S. et al. Highly Selective and Low Damage Etching of GaAs/AlGaAs Heterostructure using Cl2/O2 Neutral Beam. Plasma Chem Plasma Process 30, 633–640 (2010). https://doi.org/10.1007/s11090-010-9246-3

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s11090-010-9246-3

Keywords

Search

Navigation