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Limitations and Advantages of Raman Spectroscopy for the Determination of Oxidation Stresses

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Abstract

Raman spectroscopy has in recent years been used by several research groups to study the stresses that develop in thermally grown oxide layers, particularly Cr2O3, at elevated temperatures between 700 and 900 °C. This paper presents an overview of the Raman technique and describes quantitatively the factors that, in addition to stress, affect the Raman peak shifts, including temperature, non-stoichiometry, impurities, stresses and instrumental calibration. It also summarizes and reviews published work in this area and in doing so, discusses the pros and cons of this technique for oxidation stress measurements.

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Author notes

  1. J. Mougin

    Present address: CEA Grenoble, Grenoble Cedex, France

Authors and Affiliations

  1. Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA

    P. Y. Hou & J. Ager

  2. Laboratoire SIMaP, Grenoble INP/CNRS/UJF, Saint Martin d’Hères Cedex, 38402, France

    J. Mougin & A. Galerie

Authors
  1. P. Y. Hou
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  2. J. Ager
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  3. J. Mougin
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  4. A. Galerie
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Correspondence to P. Y. Hou.

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Hou, P.Y., Ager, J., Mougin, J. et al. Limitations and Advantages of Raman Spectroscopy for the Determination of Oxidation Stresses. Oxid Met 75, 229–245 (2011). https://doi.org/10.1007/s11085-011-9235-9

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  • DOI: https://doi.org/10.1007/s11085-011-9235-9

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