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Growth and characterization of chromium selenide thin films for optoelectronic applications

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Abstract

Herein amorphous and stoichiometric CrSe2 thin films are obtained by the thermal deposition (TD) technique under a vacuum pressure of 10−5 mbar. The films are structurally, morphologically, optically and dielectrically characterized. It is observed that CrSe2 thin films grown by TD technique exhibit optical excitations within direct and indirect allowed energy band gaps of 2.60 eV and 3.19 eV, respectively. The amorphous CrSe2 thin films contained a wide range of exponential band distribution presented by Urbach energy width of 2.24 eV. In addition in contrast to the chemical bath deposition technique which produced Cr7Se8 films of low dielectric constant (\({\varepsilon }_{r}\sim 2\)), the TD technique revealed high dielectric constant values up to \({\varepsilon }_{r}=\) 11.9 for CrSe2 films. Moreover, the Drude-Lorentz modeling of the imaginary part of the dielectric constant spectra revealed drift mobility values in the range of 0.70–6.45 cm2/Vs. The plasmon frequency varied in the range of 5.42–8.33 GHz. Furthermore, analysis of the terahertz cutoff frequency (\({f}_{co}\)) spectra have shown that CrSe2 thin films exhibit \({f}_{co}\) values in the range of 3.30–40.0 THz. The features of CrSe2 thin films deposited by the thermal evaporation technique are promising semiconductor layers suitable for 6G and terahertz technology applications.

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Data availability

The data that support the findings of this study are available from the corresponding author upon reasonable request.

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Acknowledgements

This research has been funded by Scientific Research Deanship at University (DSR) of Ha’il Saudi Arabia through project number BA-22028. The authors, therefore, gratefully acknowledge the DSR technical and financial support.

Funding

This research has been funded by Scientific Research Deanship at University of Ha’il Saudi Arabia through project number BA-22028.

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Authors and Affiliations

  1. Department of Physics, Collage of Science, University of Ha’il, Ha’il, Saudi Arabia

    Amjad Salamah M. Aljaloud & Latifah Hamad Khalid Alfhaid

  2. Department of Physics, Arab American University, Jenin, Palestine

    A. F. Qasrawi

  3. Department of Electrical and Electronics Engineering, Istinye University, 34010, Istanbul, Turkey

    A. F. Qasrawi

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  1. Amjad Salamah M. Aljaloud
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  2. A. F. Qasrawi
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  3. Latifah Hamad Khalid Alfhaid
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Contributions

ASMA have shared in the review article collection, wins the fund, learned and shared parts of optical analyses. LHKA calculated the data in Fig. 4 and made Tauc's equation fittings (Fig. 3a, b). She also determined the energy band gaps. QAF. guided the work, measured the data and analyzed or shared analyses of the all data in Figs. 1, 4. He carried out the computational analyses and edited the article.

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Correspondence to A. F. Qasrawi.

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Aljaloud, A.S.M., Qasrawi, A.F. & Alfhaid, L.H.K. Growth and characterization of chromium selenide thin films for optoelectronic applications. Opt Quant Electron 55, 1254 (2023). https://doi.org/10.1007/s11082-023-05572-4

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