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Characterizing graphene/HfO2 and HfO2/graphene interfaces through Raman spectroscopy analysis

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Abstract

In this paper, we present a comparative analysis of the Raman spectra of two heterostructures: Si/SiO2/HfO2/Graphene and Si/SiO2/Graphene/HfO2. In the former configuration, the Graphene layer is transferred onto the 5 nm-thick HfO2 layer, while the latter configuration involves the growth of à 5 nm-thick HfO2 layer by atomic layer deposition (ALD) on the Graphene layer. The analysis of the Raman spectra has demonstrated significant differences between the interfaces Graphene/HfO2 and HfO2/Graphene. The distinct Raman signatures observed emphasize the critical role played by the specific order and arrangement of the Graphene and HfO2 layers within the heterostructure, which impacts the charge transfer between these two materials and the presence or absence of strains. The Raman spectra corresponding to different thickness of the HfO2 layer (5, 10, 15, and 20 nm) in Si/SiO2/Graphene/HfO2 heterostructure shows the appearance of a small shoulder on the low-frequency side of the G band around 1523 cm-1. Furthermore, it was observed that the intensity of this shoulder diminishes as the thickness of the HfO2 layer increases. The observed discrepancies between spectra, related to the experimental conditions employed for sample preparation, are attributed to the interplay of two phenomena: the transfer of charges among Graphene, HfO2, and SiO2, as well as the emergence of constraints.

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The authors declare that no funds, grants, or other support were received during the preparation of this manuscript.

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Authors and Affiliations

  1. Faculty of Sciences of Tunis, Laboratory of Nanomaterials Nanotechnology and Energy (2NE), University of Tunis El Manar, 2092, Tunis, Tunisia

    Yosra Ben Maad, Hosni Ajlani, Mehrez Oueslati & Abdelaziz Meftah

  2. Higher Institute of Multimedia Arts of Manouba (ISAMM), University of La Manouba, 1120, Tunis, Tunisia

    Hosni Ajlani

  3. Centre de Nanosciences et de Nanotechnologies C2N, Palaiseau, France

    Alan Durnez & Ali Madouri

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  1. Yosra Ben Maad
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  5. Mehrez Oueslati
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  6. Abdelaziz Meftah
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Contributions

YBM and AM elaborated the Graphene by CVD and transferred it to the substrates. AD ensured the growth of HfO2 layers by ALD onto substrates and graphene. YBM and HA made the Raman Measurements. All the authors discussed the experimental results and contributed to their interpretation. YBM and HA wrote the main manuscript. All authors reviewed the manuscript.

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Correspondence to Hosni Ajlani.

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Ben Maad, Y., Ajlani, H., Durnez, A. et al. Characterizing graphene/HfO2 and HfO2/graphene interfaces through Raman spectroscopy analysis. Opt Quant Electron 55, 1275 (2023). https://doi.org/10.1007/s11082-023-05536-8

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