Abstract
In the present study, Titanium dioxide silicon heterojunction (TiO2–SHJ) solar cell, TiO2/i–a–Si:H/p–c–Si, has been studied using AFORS-HET numerical simulation software. The Optimization of thickness, doping concentration, silicon surface texturing and study on defect states is carried out to achieve optimum efficiency. Experimentally, a maximum efficiency of 14.16% for TiO2–Si heterojunction solar cell has been achieved. Herein, a maximum efficiency of 24.13% for pyramid textured Titanium dioxide silicon heterojunction (TiO2–SHJ) has been achieved for optimized cell parameters. Efficiency of TiO2–SHJ solar cells improved by 1.2% with incorporation of i–a–Si:H. Series and shunt resistance values have been evaluated using J–V curves for different p-type doping concentrations. Further, impact of defect states on performance have been investigated assuming Gaussian-distributed neutral defects at intrinsic energy level along with conduction and valence tail states. The simulated solar cell can be used to enhance the efficiency from experimentally achieved 14.16 to 24.13% for the TiO2–SHJ cell by using optimized parameters obtained in present investigation.
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Acknowledgements
Authors highly acknowledge Director, CSIR-National Physical Laboratory, New Delhi India for his kind support. One of the authors, Manoj Kumar, highly acknowledge University grants commission (UGC) Govt. of India for providing Senior Research Fellowship (SRF, DEC-18-532342). Authors also acknowledge Helmholtz-Zentrum Berlin for providing AFORS-HET simulation software.
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Manoj Kumar: Simulation work, Writing original draft and editing. Sushil Kumar: Conceptualization, review & editing, Supervision.
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Kumar, M., Kumar, S. 24.13% efficient TiO2/i–a–Si:H/p–c–Si heterojunction solar cell by AFORS-HET numerical simulation. Opt Quant Electron 55, 441 (2023). https://doi.org/10.1007/s11082-023-04716-w
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DOI: https://doi.org/10.1007/s11082-023-04716-w